ON Semiconductor bsp16t1-d free download

File name bsp16t1-d.pdf

BSP16T1G High Voltage Transistors PNP Silicon Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com PNP SILICON HIGH VOLTAGE TRANSISTOR MAXIMUM RATINGS SURFACE MOUNT Rating Symbol Value Unit Collector-Emitter Voltage VCEO --300 Vdc Collector-Base Voltage VCBO --350 Vdc COLLECTOR 2,4 Emitter-Base Voltage VEBO --6.0 Vdc Collector Current IC --100 mAdc BASE 1 Total Device Dissipation @ TA = 25C PD 1.5 W (Note 1) Storage Temperature Range PD --65 to C EMITTER 3 +150 Junction Temperature TJ 150 C MARKING THERMAL CHARACTERISTICS DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, RJA 83.3 C/W AYW TO--223 Junction--to--Ambient BT2G CASE 318E Stresses exceeding Maximum Ratings may damage the device. Maximum STYLE 1 G Ratings are stress ratings only. Functional operation above the Recommended 1 Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in x 1.575 in x A = Assembly Location 0.059 in; mounting pad for the collector lead min. 0.93 sq. in. Y = Year W = Work Week